jiang su changjiang electronics technology co . , ltd to - 92 plastic - encapsulate transistors m 8550 transistor ? p np ? features power dissipation p cm : 0. 625 w ? t amb=25 ??? collector current i cm : - 1 a c ollector - base voltage v ( br ) cbo : - 4 0 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min max unit collector - base breakdown voltage v(br) cbo i c = - 100 | a ? i e =0 - 40 v c ollector - emitter breakdown voltage v(br) ceo * i c = - 0.1ma , i b =0 - 25 v emitter - base breakdown voltage v(br) e b o i e = - 1 00 | a ? i c =0 - 6 v collector cut - off current i cbo v cb = - 35 v , i e =0 - 0.1 | a collector cut - off current i ceo v ce = - 20 v , i b =0 - 0.1 | a h fe (1) v ce = - 1 v , i c = - 5ma 45 h fe (2 ) v ce = - 1 v , i c = - 100ma 85 300 dc current g ain h fe ? 3 ? v ce = - 1 v , i c = - 800ma 40 collector - emitter saturation voltage v ce(sat) i c = - 8 00ma , i b = - 80 m a - 0.5 v b ase - emitter saturation voltage v be(sat) i c = - 800ma , i b = - 80m a - 1.2 v transition frequency f t v ce = - 6v, i c = - 20ma f=3 0 mhz 150 mhz * pulse test o pulse width ? 300s ? duty cycle ? 2 % ? 1 2 3 to ?a 92 1.emitter 2. base 3 . collector
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